
Absolute Maximum Ratings: (Note 1)

	Rating			Symbol	Value

	Supply Voltage		 VDD	-0.3V to +7.0V
	Input Voltage		 Vin	-0.3V to VDD +0.3V
	Operating Temperature	 TA	 0 C to +70 C
	Storage Temperature	 Ts	-55 C to +150 C

This device contains input protection against damage due to high static
voltages or electric fields; however, precautions should be taken to avoid
application of voltages higher than the maximum rating.

Notes:
	1. Exceeding these ratings may cause permanent damage. Functional
	   operation under these conditions is not implied.



DC Chararacteristics (All Devices): VDD = 5.0V +-5%, VSS = OV, TA = 0 C to +70 C

Parameter					Symbol	Min	Max	Unit

Input High Voltage				 Vih
/RES, RDY, /IRQ, Data, /SO, BE				2.0	Vdd+0.3	 V
/ABORT, /NMI, Phi2 (IN)					0.7Vdd	Vdd+0.3	 V

Input Low Voltage				 Vil
/RES, RDY, /IRQ, Data, /SO, BE				-0.3	0.8	 V
/ABORT, /NMI, Phi2 (IN)					-0.3	0.2	 V

Input Leakage Current (Vin = 0 to VDD)		 Iin
/RES, /NMI, /IRQ, /SO, BE
/ABORT (Internal Pullup)				-100	 1	uA
RDY (Internal Pullup, Open Drain)			-100	10	uA
Phi2 (IN)						-1	 1	uA
Address, Data, R/W (Off State, BE = 0)			-10	10	uA

Output High Voltage (Ioh = -100 uA)		 Voh
SYNC, Data, Address, R/W, ML, VP, M/X,
E, VDA, VPA, Phi1 (out), Phi2 (out)			0.7Vdd	-	 V

Output Low Voltage (Ioh = -100 uA)		 Vol
SYNC, Data, Address, R/W, ML, VP, M/X,
E, VDA, VPA, Phi1 (out), Phi2 (out)			-	0.4	 V

Supply Current (No Load)			 Idd
	f = 2 MHz					-	10	mA
	f = 4 MHz					-	20	mA
	f = 6 MHz					-	30	mA
	f = 8 MHz					-	40	mA

Standby Current (No Load; Data Bus = Vss or VDD)
Phi2 (in) = /ABORT = /RES = /NMI = /IRQ = /SO = BE = VDD)
						 Isb	-	10	uA

Capasitance (Vin = 0V, TA = 25C, f = 2 MHz)
Logic, Phi2 (in)				 Cin	-	10	pF
Address, Data, R/W (Off State)			 Cts	-	15	pF



AC Chararacteristics (G65SC802): VDD = 5.0V +-5%, VSS = OV, TA = 0 C to +70 C

				  2 MHz      4 MHz      6 MHz      8 MHz
Parameter		Symbol	Min  Max   Min  Max   Min  Max   Min  Max  Unit

Cycle Time		tCYC    500  DC    250  DC    167  DC    125  DC    nS
Clock Pulse Width Low	tPWL   0.240 10   0.120 10   0.080 10   0.060 10    uS
Clock Pulse Width High	tPWH    240  inf   120  inf   80   inf   60   inf   nS
Fall Time, Rise Time	tF,tR    -   10     -   10     -    5     -    5    nS
Delay Time, Ph2 to Ph1	tDphi1   -   40     -   40     -   40     -   40    nS
Delay Time, Ph2 to Ph2	tDphi2   -   40     -   40     -   40     -   40    nS
A0-A15 Hold Time	tAH     10    -    10    -    10    -    10    -    nS
A0-A15 Setup Time	tADS     -   100    -   75     -   60     -   40    nS
Access Time		tACC    365   -    130   -    87    -    70    -    nS
Read Data Hold Time	tDHR    10    -    10    -    10    -    10    -    nS
Read Data Setup Time	tDSR    40    -    30    -    20    -    15    -    nS
Write Data Delay Time	tMDS     -   100    -   70     -   60     -   40    nS
Write Data Hold Time	tDHW    10    -    10    -    10    -    10    -    nS
CPU Control Setup Time	tPCS    40    -    30    -    20    -    15    -    nS
CPU Control Hold Time	tPCH    10    -    10    -    10    -    10    -    nS
E,MX Output Hold Time	tEH     10    -    10    -     5    -     5    -    nS
E,MX Output Setup Time	tES     50    -    50    -    25    -    15    -    nS
Capacitive Load (Address, Data, and R/W)
			CEXT    -    100    -   100    -   35     -   35    pF


Timing Notes:
	1 Typical output load = 100 pF
	2 Voltage levels are VL < 0.4V, VH > 2.4V
	3 Timing measurement points are 0.8V and 2.0V



AC Chararacteristics (G65SC816): VDD = 5.0V +-5%, VSS = OV, TA = 0 C to +70 C

				  2 MHz      4 MHz      6 MHz      8 MHz
Parameter		Symbol	Min  Max   Min  Max   Min  Max   Min  Max  Unit

Cycle Time		tCYC    500  DC    250  DC    167  DC    125  DC    nS
Clock Pulse Width Low	tPWL   0.240 10   0.120 10   0.080 10   0.060 10    uS
Clock Pulse Width High	tPWH    240  inf   120  inf   80   inf   60   inf   nS
Fall Time, Rise Time	tF,tR    -   10     -   10     -    5     -    5    nS
A0-A15 Hold Time	tAH     10    -    10    -    10    -    10    -    nS
A0-A15 Setup Time	tADS     -   100    -   75     -   60     -   40    nS
BA0-BA7 Hold Time	tBH     10    -    10    -    10    -    10    -    nS
BA0-BA7 Setup Time	tBAS     -   100    -   90     -   65     -   45    nS
Access Time		tACC    365   -    130   -    87    -    70    -    nS
Read Data Hold Time	tDHR    10    -    10    -    10    -    10    -    nS
Read Data Setup Time	tDSR    40    -    30    -    20    -    15    -    nS
Write Data Delay Time	tMDS     -   100    -   70     -   60     -   40    nS
Write Data Hold Time	tDHW    10    -    10    -    10    -    10    -    nS
CPU Control Setup Time	tPCS    40    -    30    -    20    -    15    -    nS
CPU Control Hold Time	tPCH    10    -    10    -    10    -    10    -    nS
E,MX Output Hold Time	tEH     10    -    10    -     5    -     5    -    nS
E,MX Output Setup Time	tES     50    -    50    -    25    -    15    -    nS
Capacitive Load (Address, Data, and R/W)
			CEXT     -   100    -   100    -   35     -   35    pF
BE to High Imp. State	tBHZ     -   30     -   30     -   30     -   30    nS
BE to Valid Data	tBVD     -   30     -   30     -   30     -   30    nS


Timing Notes:
	1 Typical output load = 100 pF
	2 Voltage levels are VL < 0.4V, VH > 2.4V
	3 Timing measurement points are 0.8V and 2.0V

